SIMOX (Emis Processing)

Separation-by-Implanted-Oxygen (SIMOX) technology is a method of fabrication of silicon on-insulator structures and substrates by implanting high doses of oxygen and high temperature annealing. SIMOX consists of a sequence of chapters, each of which is written by a pioneer or key contributor to the technical area. The content includes an historical perspective of SIMOX developments, fundamental formation mechanisms, emerging techniques, along with SOI material characterisation methods and results, technological processes from R&D to advanced applications, and a brief overview of VLSI circuit applications.

SIMOX represents the first effort to compile a broad spectrum of knowledge from various groups of researchers and technologists in the world. It provides the reader with a basic understanding of SIMOX technology and in addition gives a good starting point for further investigation and applications.

Also available:

Process Technology for Silicon Carbide Devices - ISBN 9780852969984
Fabrication of GaAs Devices - ISBN 9780863413537

The Institution of Engineering and Technology is one of the world's leading professional societies for the engineering and technology community. The IET publishes more than 100 new titles every year; a rich mix of books, journals and magazines with a back catalogue of more than 350 books in 18 different subject areas including:

-Power & Energy
-Renewable Energy
-Radar, Sonar & Navigation
-Electromagnetics
-Electrical Measurement
-History of Technology
-Technology Management