This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
Hierarchical Device Simulation
📄 Viewing lite version
Full site ›
Book Details
PublisherSpringer
ISBN / ASIN321101361X
ISBN-139783211013618
AvailabilityUsually ships in 24 hours
Sales Rank10,691,121
MarketplaceUnited States 🇺🇸