Beam Processing and Laser Chemistry

This volume discusses both the practical and theoretical aspects of energy beam materials processing. It highlights the recent advances in the use of beams and incoherent light sources to enhance or modify chemical processes at solid surfaces. Special attention is given to the latest developments in the use of ion, electron and photon beams, and on laser-assisted process chemistry. Thin film and surface and interface reactions as well as bulk phase transformations are discussed. Practical technological details and the criteria for present and future applications are also reviewed. The papers collected in this volume reflect the continuing strong interest and variety of development in this field. A selection of contents: Deposition. Photo-assisted MOVPE growth of calcium fluoride (K.J. Mackey et al). XPS characterization of chromium films deposited from Cr (CO) 6 at 248 nm (R. Nowak et al). The chemistry of alkyl - aluminum compounds during laser-assisted chemical vapor deposition (G.S. Higashi). Influence of dilution in nitrogen on the photodissociation processes of silane and disilane at 193 nm. (E. Boch et al). Growth processes of epitaxial metal films on semiconductor and insulator substrates by ionized cluster beam (I. Yamada). Kinetics and mechanisms of CW laser induced deposition of metals for microelectronics (G. Auvert). Damage Mechanisms. Modelling of lattice damage accumulation during high energy ion implantation (N. Hecking, E.H. te Kaat). Defects created by 3.5 GeV xenon ions in silicon (P. Mary et al). Mixing, Crystallisation and Synthesis. Material transformations in semiconductor and magnetic thin films (E.E. Marinero). Explosive crystallization of amorphous silicon: triggering and propagation (W.C. Sinke et al). Structural changes in AuxSi1-x alloy films under laser irradiation (J. Marfaing et al). Ion-assisted recrystallization of amorphou