Extreme Ultraviolet Lithography (SPIE Special Collections)

In the drive to maintain scaling of semiconductor devices according to Moore's law, extreme-ultraviolet lithography (EUVL) is a leading candidate among next-generation lithography (NGL) technologies to succeed 193-nm optical lithography employing water immersion. Today, leading-edge semiconductor companies are manufacturing their final generation of devices using 193-nm immersion lithography with single patterning per layer. While device scaling is possible with double- or multiple-patterning immersion lithography, single-patterning NGL technologies will provide tighter overlay capability, better critical dimension uniformity, and potentially a lower cost. Currently, EUVL is being developed by these very companies for insertion into high volume manufacturing (HVM) within the next five years. This special collection of EUVL papers will ease the reader's overwhelming task of sorting through volumes of technical papers to find good and original papers on specific topics of interest. These selected papers were originally published in the Journal of Micro/Nanolithography, MEMS, and MOEMS and Proceedings of SPIE.