Electron transport properties in semiconductor at high electric fields

The aim of this work is to study the transport properties of GaAs, InP, GaInAs and InN such as the drift velocity, the drift mobility and the average electron energy at high electric field using ensemble Monte Carlo Simulation Technique. These transport properties also calculated at different temperature and doping values in order to show their effects. The included scattering mechanisms in our work are polar optical phonon, ionized impurity,acoustic phonon and intervalley phonon and the scattering rate of these scattering mechanisms is calculated.