IEC 60747-9 Ed. 1.1 b:2001, Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs) Buy on Amazon
Facebook LinkedIn

IEC 60747-9 Ed. 1.1 b:2001, Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)

Author IEC TC/SC 47E
Publisher Multiple. Distributed through American National Standards Institute (ANSI)
Shop on Amazon — pick your country
🇺🇸 USA 🇨🇦 Canada 🇬🇧 UK 🇩🇪 Germany 🇫🇷 France 🇮🇳 India
348.70 USD
Buy New on Amazon 🇺🇸

Usually ships in 24 hours

Book Details
Author(s) IEC TC/SC 47E
Publisher Multiple. Distributed through American National Standards Institute (ANSI)
ISBN / ASIN B000XYS4FQ
ISBN-13 978B000XYS4F8
Availability Usually ships in 24 hours
Sales Rank #99,999,999
Marketplace United States 🇺🇸
Ratings & Reviews No reviews yet — be the first!

No reviews yet.

Description
Gives product specific standards for terminology, letter symbols, essential ratings and characteristics and measuring methods for insulated-gate bipolar transistors (IGBTs).
✍️

More Books by IEC TC/SC 47E

IEC 60747-8-4 Ed. 1.0 b:2004, Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications
IEC 60747-8-4 Ed. 1.0 b:2004, Discrete semiconductor d…
View
IEC 60747-7-4 Ed. 1.0 b:1991, Semiconductor devices - Discrete devices - Part 7: Bipolar transistors - Section Four: Blank detail specification for ... transistors for high-frequency amplification
IEC 60747-7-4 Ed. 1.0 b:1991, Semiconductor devices - …
View
IEC 60747-6-3 Ed. 1.0 b:1993, Semiconductor devices - Discrete devices - Part 6: Thyristors - Section Three: Blank detail specification for reverse ... case-rated, for currents greater than 100 A
IEC 60747-6-3 Ed. 1.0 b:1993, Semiconductor devices - …
View
IEC 60747-16-3 Ed. 1.0 en:2002, Semiconductor devices - Part 16-3: Microwave integrated circuits - Frequency converters
IEC 60747-16-3 Ed. 1.0 en:2002, Semiconductor devices …
View
IEC 60747-7-1 Ed. 1.0 b:1989, Semiconductor devices - Discrete devices - Part 7: Bipolar transistors - Section One: Blank detail specification for ... for low and high-frequency amplification
IEC 60747-7-1 Ed. 1.0 b:1989, Semiconductor devices - …
View
IEC 60747-16-2 Ed. 1.0 en:2001, Semiconductor devices - Part 16-2: Microwave integrated circuits - Frequency prescalers
IEC 60747-16-2 Ed. 1.0 en:2001, Semiconductor devices …
View
IEC 60747-7-3 Ed. 1.0 b:1991, Semiconductor devices - Discrete devices - Part 7: Bipolar transistors - Section three: Blank detail specification for bipolar transistors for switching applications
IEC 60747-7-3 Ed. 1.0 b:1991, Semiconductor devices - …
View
IEC 60747-7-5 Ed. 1.0 en:2005, Semiconductor devices - Discrete devices - Part 7-5: Bipolar transistors for power switching applications
IEC 60747-7-5 Ed. 1.0 en:2005, Semiconductor devices -…
View
IEC 60747-8 Ed. 2.0 b:2000, S emiconductor devices - Part 8: Field-effect transistors
IEC 60747-8 Ed. 2.0 b:2000, S emiconductor devices - P…
View
IEC 60747-6-2 Ed. 1.0 b:1991, Semiconductor devices - Discrete devices - Part 6: Thyristors - Section Two: Blank detail specification for ... (triacs), ambient or case-rated, up to 100 A
IEC 60747-6-2 Ed. 1.0 b:1991, Semiconductor devices - …
View
Donate to EbookNetworking
← No Prev
No Next →