{"version":"1.0","type":"rich","provider_name":"EbookNetworking","provider_url":"https://www.ebooknetworking.net","title":"Process development and device characteristics of aluminum gallium nitride/gallium nitride HEMTs for high frequency applications.","author_name":"Dong Hyun Kim","thumbnail_url":"https://www.ebooknetworking.net/books/124/395/big1243957905.jpg","thumbnail_width":330,"thumbnail_height":500,"html":"<a href=\"https://www.ebooknetworking.net/books_detail-1243957905.html\">Process development and device characteristics of aluminum gallium nitride/gallium nitride HEMTs for high frequency applications.</a>","width":400,"height":300}