{"version":"1.0","type":"rich","provider_name":"EbookNetworking","provider_url":"https://www.ebooknetworking.net","title":"IEC 60747-7-4 Ed. 1.0 b:1991, Semiconductor devices - Discrete devices - Part 7: Bipolar transistors - Section Four: Blank detail specification for ... transistors for high-frequency amplification","author_name":"IEC TC/SC 47E","thumbnail_url":"https://www.ebooknetworking.net/books/B00/0Y2/bigB000Y2LMS8.jpg","thumbnail_width":330,"thumbnail_height":500,"html":"<a href=\"https://www.ebooknetworking.net/books_detail-B000Y2LMS8.html\">IEC 60747-7-4 Ed. 1.0 b:1991, Semiconductor devices - Discrete devices - Part 7: Bipolar transistors - Section Four: Blank detail specification for ... transistors for high-frequency amplification</a>","width":400,"height":300}