LPCVD Silicon Nitride and Oxynitride Films: Material and Applications in Integrated Circuit Technology (Research Reports Esprit / Project 369)

This volume reports the work done in ESPRIT Project 369 "Physical-chemical characterization of silicon oxynitrides in relation to their electrical properties". The project concentrated on material obtained by low pressure chemical vapour deposition (LPCVD) and involved measuring and comparing a very large number of samples. General interest in silicon oxynitrides for applications in integrated circuit technology stems from the fact that proper choice of deposition conditions enables one to produce materials with properties which can be either oxide-like or nitride-like. The papers collected in this volume give a broad overview of the chemical and physical characteristics of silicon oxynitrides, with special emphasis on the way in which these properties influence the electrical characteristics and behavior of this important material. Most of the contributions describe original scientific and technical work. The aim of the book is to provide the material scientist and the integrated circuit technologist with enough information to consider this class of materials for application in integrated circuit technology.