The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model.
Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.