Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics: Volume 567 (MRS Proceedings)
Book Details
Author(s)Huff, H. R.
PublisherCambridge University Press
ISBN / ASIN1558994742
ISBN-139781558994744
AvailabilityIn Stock.
Sales Rank6,140,923
MarketplaceUnited States 🇺🇸
Description
Device scaling has been the engine driving the continued pervasiveness of the microelectronics revolution. The SIA roadmap calls for 4-5nm films (oxide equivalent thickness) in 2000, and
