Defects and Diffusion in Semiconductors: An Annual Retrospective II (Defect and Diffusion Forum) (No. 2)

The second volume in the coverage of results in the field covers abstracts from the approximate period of mid-1998 to mid-1999. As always, due to the vagaries of some journal publication dates, abstracts of earlier work may be included in order that the present contents merge seamlessly with those of volumes 162-163; the previous issue in this sub-series. The orginal works in the present volume concern diffusion phenomena and defects in the two most important semiconductors, with C.A. Londos et al's major papers on infra-red experimental studies of oxygen-vacancy related defects that result from the irradiaton of silicon, plus shorter theorectical papers on the calculation of Cd diffusion profiles in GaAs (E. Antoncik), on the enhancement or retardation of donor/acceptor dopants in pre-doped silicon (Antoncik) adn self-diffusion in GaAs (P. Murugan and K. Ramachandran). As to the abstract section of the present volume, this again reflects the increasing interest in ceramic-type semiconductors such as GaN which, before volumes 162-163, had been covered under "nitride" or "carbide" headings; without reference to their semiconducting properties. The original papers and abstracts together provide insight into current understanding of, and future prospects, in the field of semiconductors.