SILICON-ON-INSULATOR (SOI): IBM Creates First SiGe on SOI Bipolar Transistor.: An article from: Electronic Materials Update

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Citation Details
Title: SILICON-ON-INSULATOR (SOI): IBM Creates First SiGe on SOI Bipolar Transistor.
Publication:Electronic Materials Update (Newsletter)
Date: November 1, 2003
Publisher: Business Communications Company, Inc.
Volume: 17 Issue: 10

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