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Microwave and mm-wave power amplification using pseudomorphic HEMTs. (high electron mobility transistors)(Technical Feature): An article from: Microwave Journal

Name: Microwave and mm-wave power amplification using pseudomorphic HEMTs. (high electron mobility transistors)(Technical Feature): An article from: Microwave Journal
Author: P.M. Smith, P.C. Chao, J.M. Ballingall, A.W. Swanson
ISBN: 978B00091WMW4

AuthorP.M. Smith, P.C. Chao, J.M. Ballingall, A.W. Swanson

PublisherHorizon House Publications, Inc.

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Book Details

Author(s)P.M. Smith, P.C. Chao, J.M. Ballingall, A.W. Swanson

PublisherHorizon House Publications, Inc.

ISBN / ASINB00091WMWO

ISBN-13978B00091WMW4

MarketplaceFrance 🇫🇷

Description

This digital document is an article from Microwave Journal, published by Horizon House Publications, Inc. on May 1, 1990. The length of the article is 5586 words. The page length shown above is based on a typical 300-word page. The article is delivered in HTML format and is available in your Amazon.com Digital Locker immediately after purchase. You can view it with any web browser.

Citation Details
Title: Microwave and mm-wave power amplification using pseudomorphic HEMTs. (high electron mobility transistors)(Technical Feature)
Author: P.M. Smith
Publication:Microwave Journal (Refereed)
Date: May 1, 1990
Publisher: Horizon House Publications, Inc.
Volume: v33 Issue: n5 Page: p71(10)

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