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📖 Description
This digital document is an article from American Journal of Applied Sciences, published by Science Publications on June 1, 2010. The length of the article is 2348 words. The page length shown above is based on a typical 300-word page. The article is delivered in HTML format and is available immediately after purchase. You can view it with any web browser.
From the author: Key words: Bipolar Junction Transistor (BJT), gamma ([gamma]) rays, in situ, Total Ionizing Dose (TID)
Citation Details Title: Effects of total ionizing dose on bipolar junction transistor.(Report) Author: Chee Fuei Pien Publication:American Journal of Applied Sciences (Magazine/Journal) Date: June 1, 2010 Publisher: Science Publications Volume: 7 Issue: 6 Page: 807(4)
