Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor

Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT’s) are microwave power devices that have the performance characteristics to improve the capabilities of current and future Navy radar and communication systems. The Office of Naval Research (ONR) is funding research for the development of GaN-based microwave power amplifiers for use in future radar and communication systems. This thesis studies the effects of AlGaN/GaN HEMTs’ polarization, piezoelectric (PZ) and spontaneous, properties utilizing the commercially available Silvaco AtlasTM software for modeling and simulation. The polarization properties are suspected to enhance the two-dimensional electron gas (2DEG) at the AlGaN/GaN interface.