ZnMgO by APCVD enabling high-performance mid-bandgap CIGS on polyimide modules: October 2009 - October 2010

Original publisher: Golden, CO: National Renewable Energy Laboratory, [2011] OCLC Number: (OCoLC)721329841 Subject: Photovoltaic cells -- Research. Excerpt: ... An example of the device efficiency results from one of the mid-bandgap CIGS alloy experiments ( Eg ≅ 1.40 eV ) is shown in Figure 7 below, which also further includes a low-bandgap ( Eg ≅ 1.16 eV ) baseline device for comparison. One of the experimental alloyed ZnO buffer layer devices was tested at over 12 % eff., representing the best alloyed ZnO alloy / mid-bandgap CIGS device to date, and the highest bandgap. However, again the mid-bandgap CIGS with the CdS buffer layer tested out slight higher at about 13 % eff. ( Eg ≅ 1.40 eV ). The power temperature coefficient in the temperature range of 20 to 65 ° C is indicated in Figure 9. 40 Low-Bandgap ( 1.16 eV ) CdS / CIGS ( CRC 0292 C27-A5 ) 30 Mid-Bandgap ( 1.40 eV ) Alloyed ZnO / CIGS alloy ( IP-196 B3-B4 ) 20 ( mA / cm2 ) 10 0-0.4-0.2 0.0 0.2 0.4 0.6 0.8 1.0 Jsc-10-20-30-40 Voltage ( V ) Device ID Eff ( % ) Voc ( V ) Jsc ( mA / cm ^ 2 ) Fill Factor Mid-Bandgap ( 1.40 eV ) Alloyed ZnO / CIGS alloy ( IP-196 B3-B4 ) 12.1 0.676 30.0 0.60 Low Bandgap ( 1.16 eV ) CdS / CIGS ( CRC 0292 C27-A5 ) 11.6 0.598 29.1 0.66 Figure 7 - AM1.5 light IV curves of alloyed ZnO buffer layers on mid-bandgap CIGS alloy solar absorber device ( 1.4 eV ), and low-bandgap ( 1.16 eV ) CdS / CIGS control. 12